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Low-energy-channeling surface analysis on silicon crystals designed for high-energy-channeling in accelerators
Institute for High Energy Physics.
Institute for High Energy Physics.
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 87, no 9, article id 94102Article in journal (Refereed) Published
Abstract [en]

Channeling of relativistic particles in bent Si crystals is a powerful technique for use with accelerators. Its efficiency can be found to be highly dependent on the state of the surface of the crystal steering the particles. We investigated the morphology and structure of the surface of the samples that have been used with high efficiency for channeling in accelerators. Low-energy channeling of 2 MeVα particles or protons was used as a probe. We found that mechanical treatment of the samples leads to a superficial damaged layer, which is correlated to efficiency limitations of the crystal in accelerators. In contrast, chemical etching, which was used to treat the surface of the most efficient crystals, leaves a surface with superior perfection. © 2005 American Institute of Physics.

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2005. Vol. 87, no 9, article id 94102
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Experimental Physics
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URN: urn:nbn:se:ltu:diva-10326DOI: 10.1063/1.2033127ISI: 000231503700073Scopus ID: 2-s2.0-24644486639Local ID: 91da545e-3d5d-4f51-8e0c-fdb1bd2184ccOAI: oai:DiVA.org:ltu-10326DiVA, id: diva2:983268
Note

Upprättat; 2005; 20141216 (albvom)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-10-04Bibliographically approved

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Vomiero, Alberto

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