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Electrical and optical properties of rod-like defects in silicon
School of Natural Science, University of Newcastle upon Tyne.
School of Natural Science, University of Newcastle upon Tyne.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 85, no 20, p. 4633-4635Article in journal (Refereed) Published
Abstract [en]

Self-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both {113} and {111} RLDs to determine their structures and electrical activity. We find that small {113} RLDs are more stable than {111} RLDs but this reverses for larger defects. We attribute the electrical activity of {113} RLDs found in deep level transient spectroscopy studies with the bounding dislocations and the 0.903 eV photoluminescence to vacancy point defects lying on the habit plane.

Place, publisher, year, edition, pages
2004. Vol. 85, no 20, p. 4633-4635
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-11266DOI: 10.1063/1.1814425ISI: 000225166400025Scopus ID: 2-s2.0-10944229998Local ID: a3286de0-bd0a-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-11266DiVA, id: diva2:984215
Note
Validerad; 2004; 20070215 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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