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Engineering of electronic and optical properties of PbS thin films via Cu doping
Université Tunis El Manar, Faculté des Sciences de Tunis, Département de Physique, LR99ES13 Laboratoire de Physique de la Matière Condensée (LPMC), 2092, Tunis.
Université Tunis El Manar, Faculté des Sciences de Tunis, Département de Physique, LR99ES13 Laboratoire de Physique de la Matière Condensée (LPMC), 2092, Tunis.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science.ORCID iD: 0000-0001-6877-9282
Consiglio Nazionale delle Ricerche, Pisa, Universita Degli Studi di Padova, CNR-IENI, Dipartimento di Scienze Chimiche, Università di Padova.
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Number of Authors: 62016 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 97, p. 519-528Article in journal (Refereed) Published
Abstract [en]

Copper-doped PbS polycrystalline thin films were deposited by chemical bath deposition by adding small amount of Cu (ysolution = [Cu2+]/[Pb2+]) between 0.5 and 2 at%. The composition, structure, morphology, optical and electrical properties of the films were investigated by means of X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoemission spectroscopy (XPS), UV–visible–near infrared (UV–Vis–NIR) spectrophotometry and Hall effect measurements. The XRD studies showed that the undoped films have PbS face centered cubic structure with (111) preferential orientation, while preferential orientation changes to (200) plane with increasing Cu doping concentration. The AFM and SEM measurements indicated that the film surfaces consisted of nanosized grains with pyramidal shape. Optical band gap was blue shifted from 0.72 eV to 1.69 eV with the increase in Cu doping concentration. The film obtained with the [Cu2+]/[Pb2+] ratio equal to 1.5 at% Cu showed the minimum resistivity of 0.16 Ω cm at room temperature and optimum value of optical band gap close to 1.5 eV. 1.5 at% Cu-doped PbS thin films exhibit the best optical and electrical properties, suitable for solar cells applications.

Place, publisher, year, edition, pages
2016. Vol. 97, p. 519-528
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Experimental physics
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URN: urn:nbn:se:ltu:diva-11293DOI: 10.1016/j.spmi.2016.07.025ISI: 000385319200058Scopus ID: 2-s2.0-84979544788Local ID: a3b2ef16-5918-43f5-b43d-2c52bd26a4adOAI: oai:DiVA.org:ltu-11293DiVA, id: diva2:984243
Note

Validerad; 2016; Nivå 2; 20160816 (andbra)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Dobryden, IlliaVomiero, Alberto

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