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Integration of metal oxide nanowires in dye sensitized solar cells
Università di Brescia.ORCID iD: 0000-0003-2935-1165
INFM-CNR SENSOR Lab. and Physics and Chemistry Department.
INFM-CNR SENSOR Lab. and Physics and Chemistry Department.
INFM-CNR SENSOR Lab. and Physics and Chemistry Department.
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2009 (English)In: 2009 34th IEEE Photovoltaic Specialists Conference : (PVSC 2009): Philadelphia, Pennsylvania, USA, 7 - 12 June 2009, Piscataway, NJ: IEEE Communications Society, 2009, p. 001325-001326, article id 5411260Conference paper, Published paper (Refereed)
Abstract [en]

One of the most promising architectures of third generation solar cells is integration of single crystalline nanowires as electron transporters in anodes of electrochemical cells.[1-3] The nanowire-based cells aim at significantly increase cell efficiency thanks to the higher mobility of electrons along the single crystalline lattice of the nanowires with respect to traditional polycrystalline networks, greatly reducing electron-hole recombination controllable by passivation, functionalization or coaxial coating of the nanowire. The nanonetworks have been integrated in DSCs using the traditional N719 dye and the I-3/I-3 redox couple. The functional properties of the cells under 1 sun irradiation have been compared with traditional polycrystalline TiO2 photoanodes. ©2009 IEEE.

Place, publisher, year, edition, pages
Piscataway, NJ: IEEE Communications Society, 2009. p. 001325-001326, article id 5411260
Identifiers
URN: urn:nbn:se:ltu:diva-26770DOI: 10.1109/PVSC.2009.5411260Scopus ID: 77951573299Local ID: 0027d492-9b91-435c-864d-f109d41dfe0dISBN: 9781424429509 (print)OAI: oai:DiVA.org:ltu-26770DiVA, id: diva2:999950
Conference
IEEE Photovoltaic Specialists Conference : 07/06/2009 - 12/06/2009
Note
Upprättat; 2009; 20141211 (albvom)Available from: 2016-09-30 Created: 2016-09-30 Last updated: 2017-11-24Bibliographically approved

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