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  • 1.
    Czerwinski, Bartlomiej
    et al.
    Universite Catholique de Louvain, Institute of Condensed Matter and Nanosciences - Bio and Soft Matter, Louvain-la-Neuve.
    Postawa, Zbigniew
    Smoluchowski Institute of Physics, Jagiellonian University, ul. Reymonta 4, 30-059 Krakow.
    Garrison, Barbara J.
    Department of Chemistry, Pennsylvania State University.
    Delcorte, Arnaud
    Universite Catholique de Louvain, Institute of Condensed Matter and Nanosciences - Bio and Soft Matter, Louvain-la-Neuve.
    Molecular dynamics study of polystyrene bond-breaking and crosslinking under C60 and Arn cluster bombardment2013In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, p. 22-26Article in journal (Refereed)
    Abstract [en]

    Molecular dynamics computer simulations are used to elucidate the bond-breaking and crosslinking processes induced by 2.5 keV C60 and Arn cluster bombardment in an amorphous sec-butyl-terminated polystyrene sample. The obtained results indicate that replacement of C 60 by Ar18 or Ar60 projectiles leads to the decrease of the number of broken bonds and, hence, to the decrease of formation of new intra- and intermolecular (crosslinking) bonds. When the number of atoms in the Arn cluster is increased from 60 to 250 or more, the total number of broken bonds and the total number of newly created bonds reach a zero value. Additional comparison to the case of a fullerite crystal reveals that the change of material properties leads to almost 7.5-fold reduction of the efficiency of the crosslinking process.

  • 2.
    Guidi, V.
    et al.
    University of Ferrara.
    Antonini, A.
    University of Ferrara.
    Baricordi, S.
    University of Ferrara.
    Logallo, F.
    University of Ferrara.
    Malagù, C.
    University of Ferrara.
    Milan, E.
    University of Ferrara.
    Ronzoni, A.
    University of Ferrara.
    Stefancich, M.
    University of Ferrara.
    Martinelli, G.
    University of Ferrara.
    Vomiero, Alberto
    INFN Laboratori Nazionali di Legnaro.
    Tailoring of silicon crystals for relativistic-particle channeling2005In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 234, no 1-2, p. 40-46Article in journal (Refereed)
    Abstract [en]

    In the last years, the research on channeling of relativistic particles has progressed considerably. A significant contribution has been provided by the development of techniques for quality improvement of the crystals. In particular, a planar etching of the surfaces of the silicon crystals proved useful to remove the superficial layer, which is a region very rich in imperfections, in turn leading to greater channeling efficiency. Micro-fabrication techniques, borrowed from silicon technology, may also be useful: micro-indentation and deposition of tensile or compressive layers onto silicon samples allow one to impart an even curvature to the samples. In this way, different topologies may be envisaged, such as a bent crystal for deflection of protons and ions or an undulator to force coherent oscillations of positrons and electrons. © 2005 Elsevier B.V. All rights reserved.

  • 3.
    Jones, R.
    et al.
    Department of Physics, University of Exeter.
    Eberlein, T.A.G.
    Department of Physics, University of Exeter.
    Pinho, N.
    Department of Physics, University of Exeter.
    Coomer, B.J.
    Department of Physics, University of Exeter.
    Goss, J.P.
    Department of Physics, University of Exeter.
    Briddon, P.R.
    Department of Physics, University of Newcastle.
    Öberg, Sven
    Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.
    Self-interstitial clusters in silicon2002In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 186, no 1, p. 10-18Article in journal (Refereed)
    Abstract [en]

    Although there have been many calculations of the structures of the self-interstitial in Si and small aggregates of interstititals, In, there has been little attempt to relate the defects with experimental data. Here we discuss the assignments of the self-interstitial to the AA12 electron paramagnetic resonance (EPR) centre, and the tri-interstitial and tetra-interstitial to the W-optical centre and the B3 EPR centre, respectively. Difficulties in the assignment of I2 to the P6 EPR centre are also noted.

  • 4.
    Kaukonen, M.
    et al.
    Department of Physics, University of Exeter.
    Jones, R.
    Department of Physics, University of Exeter.
    Öberg, Sven
    Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.
    Briddon, P.R.
    Department of Physics, University of Newcastle.
    Structure of tin-vacancy defects in silicon2002In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 186, no 1, p. 24-29Article in journal (Refereed)
    Abstract [en]

    Tin-vacancy complexes Snn-Vm, n≤2, m≤2, are investigated by first-principles cluster and supercell methods. Their structures, spin-densities, electrical levels and formation energies are reported. It is found that the tin-vacancy interaction is short ranged and consequently the diffusion mechanism of Sn is somewhat different from that of the E-center.

  • 5.
    Mea, G. Della
    et al.
    INFN Laboratori Nazionali di Legnaro.
    Patelli, A.
    INFN Laboratori Nazionali di Legnaro.
    Restello, S.
    INFN Laboratori Nazionali di Legnaro.
    Rigato, V.
    INFN Laboratori Nazionali di Legnaro.
    Vomiero, Alberto
    INFN Laboratori Nazionali di Legnaro.
    14N(α,p)17O nuclear reaction cross-section at 4.9-6.1 MeV2005In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 240, no 4, p. 803-809Article in journal (Refereed)
    Abstract [en]

    The 14N(α,p)17O nuclear reaction cross-section was measured in the energy range 4.9-6.1 MeV at the laboratory angle θ = 172° in order to apply ion beam analysis to the detection of N in metal oxynitride layers. Comparison between the new calculation and data in literature was performed, highlighting important discrepancies between the new results and old cross-section data. Application of the new calculations to a standard TiN film suggests improved accuracy for the data in the present work. © 2005 Elsevier B.V. All rights reserved.

  • 6.
    Tong, Longyu
    et al.
    National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork.
    Larsson, Andreas
    Nolan, Michael
    National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork.
    Murtagh, MArtin E.
    National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork.
    Greer, James C.
    National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork.
    Barbe, Michel
    Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex.
    Bailly, Francis
    Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex.
    Chevallier, Jacques
    Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex.
    Silvestre, F.S.
    IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex.
    Loridant-Bernard, D.
    IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex.
    Constant, E.
    IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex.
    Constant, F.M.
    Laboratoire de Spectrochimie Infrarouge et Raman, UPR2631L CNRS, Université des Sciences et Techniques de Lille.
    Photo-dissociation of hydrogen passivated dopants in gallium arsenide2002In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 186, no 1-4, p. 234-239Article in journal (Refereed)
    Abstract [en]

    A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds.

  • 7.
    Vomiero, Alberto
    et al.
    Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro.
    Modena, S.
    Diportivo di Ingegneria dei Materiali.
    Soraru, G. D.
    Diportivo di Ingegneria dei Materiali.
    Raj, R.
    Blum, Y.
    SRI International.
    Mea, G. Della
    Istituto Nazionale di Fisica Nucleare (INFN).
    Investigation on the oxidation process of SiCO glasses by the means of non-Rutherford backscattering spectrometry2003In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 211, no 3, p. 401-407Article in journal (Refereed)
    Abstract [en]

    Ion beam analysis was applied for the first time to characterize the oxidation process of silicon oxycarbides (SiCO) glasses (belonging to the class of polymer-derived ceramics). The technique unveiled the structure of the interface between the silica scale and the SiCO substrate. At the early oxidation stage, a smooth concentration profile was observed between the surface silica layer and the substrate. The role of the free carbon on the kinetics of the oxidation process was studied by preparing samples with different carbon content. A high amount of free C in the SiCO glasses promotes the transition, after long oxidation periods, to a sharp interface between the silica scale and the SiCO substrate. © 2003 Elsevier Science B.V. All rights reserved.

  • 8.
    Vomiero, Alberto
    et al.
    INFN Laboratori Nazionali di Legnaro.
    Restello, Silvio
    INFN Laboratori Nazionali di Legnaro.
    Scian, Carlo
    INFN Laboratori Nazionali di Legnaro.
    Marchi, Enrico Boscolo
    INFN Laboratori Nazionali di Legnaro.
    Mea, Gianantonio Della
    INFN Laboratori Nazionali di Legnaro.
    Guidi, Vincenzo
    Dipartimento di Fisica - INFN.
    Milan, Emiliano
    Dipartimento di Fisica - INFN.
    Baricordi, Stefano
    Dipartimento di Fisica - INFN.
    Martinelli, Giuliano
    Dipartimento di Fisica - INFN.
    Carnera, Alberto
    Dipartimento di Fisica Sperimentale, Università di Torino.
    Sambo, Andrea
    Dipartimento di Fisica Sperimentale, Università di Torino.
    Structure and morphology of surface of silicon crystals to be applied for channeling at relativistic energies2006In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 249, no 1-2 SPEC. ISS., p. 903-906Article in journal (Refereed)
    Abstract [en]

    Bent crystals can be successfully applied for extraction/collimation of relativistic particles. A crucial feature to obtain high extraction efficiencies is the treatment of the surfaces being encountered by the beam, since mechanical operations induce considerable lattice imperfections. In order to remove the superficial damaged layer a planar etching can be applied on the surface exposed to the beam. This work presents a systematic study of the morphology and the crystalline perfection of the surface of the samples that have been used in accelerators with high efficiency. Crystals with different surface treatments have been investigated. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were applied on the characterisation of surface morphology. Low energy backscattering channeling of 2-MeV α particles or protons was used as a probe for the crystalline structure. The presence of a superficial damaged layer in the samples just after mechanical treatment was unveiled, while, in contrast, chemical etching leaves a surface with high crystalline perfection that can be related to the record efficiency. © 2006 Elsevier B.V. All rights reserved.

  • 9.
    Vomiero, Alberto
    et al.
    INFN Laboratori Nazionali di Legnaro.
    Scian, C.
    INFN Laboratori Nazionali di Legnaro.
    Mea, G. Della
    INFN Laboratori Nazionali di Legnaro.
    Guidi, V.
    Dipartimento di Fisica Sperimentale, Università di Torino.
    Martinelli, G.
    Dipartimento di Fisica Sperimentale, Università di Torino.
    Schiffrer, G.
    Dipartimento di Fisica Sperimentale, Università di Torino.
    Comini, E.
    CNR IDASC SENSOR Lab.
    Ferroni, M.
    CNR IDASC SENSOR Lab.
    Sberveglieri, G.
    CNR IDASC SENSOR Lab.
    Application of ion beam analysis to the selective sublimation processing of thin films for gas sensing2006In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 249, no 1-2 SPEC. ISS., p. 302-305Article in journal (Refereed)
    Abstract [en]

    Ion beam analysis was successfully applied to a novel technique, named selective sublimation process (SSP), for deposition of nanostructured gas-sensing films through reactive sputtering. The method consists of the co-deposition of a mixed oxide, one of which has a relatively low sublimation temperature. Annealing at suitable temperature causes the sublimation of the most volatile compound, leaving a layer with adjustable composition. The appropriate choice of thermal treatments and the consequent tailoring of the composition play a crucial role in the determination of the microstructural properties. We developed a model based on diffusion equations that provides a useful guide to control the deposition and processing parameters and we applied the model on the systems TiO2-WO3 and TiO2-MoO3. Rutherford backscattering (RBS) was demonstrated to be effective for the characterization of the diffusion and sublimation processes during SSP. Experimental results fully agree with theoretical prediction, and allowed the calculation of all the parameters involved in SSP. © 2006 Elsevier B.V. All rights reserved.

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