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  • 1.
    Abadei, S.
    et al.
    Chalmers University of Technology, Department of Microelectronics.
    Gevorgian, S.
    Chalmers University of Technology, Department of Microelectronics.
    Kugler, V.
    Department of Physics, Linköping University.
    Helmersson, U.
    Department of Physics, Linköping University.
    Andreasson, Johanna
    Luleå University of Technology, Department of Engineering Sciences and Mathematics.
    Microwave properties of tunable capacitors basee on magnetron sputtered ferroelectric Na0.5K0.5NbO3 film on low and high resistivity silicon substrates2001In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 39, no 1-4, p. 359-366Article in journal (Refereed)
    Abstract [en]

    In this work, small signal DC voltage dependent dielectric permittivity, loss tangent, and tuneability of magnetron sputtered epitaxial Na0.5K0.5NO3 films are studied experimentally. (100)-oriented Na0.5K0.5NbO3 films are deposited onto SiO2-buffered CMOS grade low resistivity (p = 10-20 cm) and high resistivity (p = 15-45 kcm) silicon substrates. Planar capacitors with 2 or 4 m gaps between electrodes have been fabricated on top of ferroelectric films. These devices have been characterized in the frequency range 1.0 MHz to 50 GHz at temperatures 30 - 300K. Na0.5K0.5NbO3/SiO2/Si structures on high resistivity silicon substrate exhibit C-V performances typical for Metal-Insulator- Semiconductor (MIS) capacitors. At low frequencies, f 1.0 GHz, the large tuneability and large losses are associated with the MIS structure, while at higher microwave frequencies the tuneability is mainly associated with the ferroelectric, film. At 1.0 MHz and room temperature, the tuneability of Na0.5K0.5NbO3/SiO2/Si structures more than 90%, reducing to 10-15 % at 50 GHz. The losses decrease with increasing the DC bias and frequency. A Q-factor more than 15 at 50 GHz is observed. The dielectric permittivity of the Na0.5K0.5NbO3 film is in the range 50-150 at frequencies 0.045-50 GHz. On low resistivity substrate the performance of Na0.5K0.5NbO3 films is completely screened by the high losses in silicon, and the tuneability is negligible

  • 2.
    Khartsev, S.
    et al.
    Department of Condensed Matter Physics, Royal Institute of Technology.
    Grishin, A.
    Department of Condensed Matter Physics, Royal Institute of Technology.
    Andreasson, Johanna
    Koh, J-H
    Electric and Magnetic Devices Research Group, Electrotechnology Research Institute, Changwon, South Korea.
    Song, J-S
    Electric and Magnetic Devices Research Group, Electrotechnology Research Institute, Changwon, South Korea.
    Comparative characteristics of Na0.5K0.5NbO 3 films on Pt by pulsed laser deposition and magnetron sputtering2003In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 55, p. 769-779Article in journal (Refereed)
    Abstract [en]

    Ferroelectric Na0.5K0.5NbO3 (NKN) thin films were grown on the Pt80Ir20 polycrystalline substrates by pulsed laser deposition (PLD) and radio frequency-magnetron sputtering (RF) technique using the same stoichiometric Na0.5K 0.5NbO3 ceramic target. X-ray diffraction proved both PLD- and RF-made Na0.5K0.5NbOj/Pt80Ir20 films are single phase and have preferential c-axis orientation. Temperature dependence of dielectric permittivity reveals the presence of two phase transitions around 210 and 410°C. Capacitance vs. applied voltage C-V @ 100 kHz, I-V, and P-E hysteresis characteristics recorded for the vertical capacitive structures yielded loss tan δ = 0.026 and 0.016, tunability about 44.5 and 30% @ 100 kV/cm, Ohmic resistivity 6.7 × 1012 Ω·cm and 0.2 × 1012 Ω·cm, remnant polarization 11.7 and 9.7 μC/cm2, coercive field 28.0 and 94.6 kV/cm for PLD- and RF-films, respectively. Piezoelectric test carried out in hydrostatic conditions showed piezoelectric coefficient dH = 21 for PLD-NKN and 15 pC/N for RF-NKN film.

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