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First principles study of hydrogen-induced decoupling of epitaxial graphene from SiC substrates
School of Physics, University of Exeter.
School of Physics, University of Exeter.
Luleå tekniska universitet, Institutionen för teknikvetenskap och matematik, Matematiska vetenskaper.ORCID-id: 0000-0002-0292-1159
School of Electrical, Electronic and Computer Engineering, University of Newcastle upon Tyne.
2011 (engelsk)Inngår i: Physics, Chemistry and Applications of Nonostructures: Proceedings of the International Conference Nanomeeting-2011 : reviews and short notes : Minsk, Belarus, 24-27 May 2011 / [ed] Victor E. Borisenko, Singapore: World Scientific Publishing Co Pte Ltd , 2011, s. 311-314Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Density functional theory calculations have been used to investigate possible mechanisms of hydrogen-induced decoupling of graphene from SiC(0001). The results suggest that hydrogen atoms reach SiC surface through extended defects in graphene layers and then migrate and passivate bonds on the SiC surface

sted, utgiver, år, opplag, sider
Singapore: World Scientific Publishing Co Pte Ltd , 2011. s. 311-314
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URN: urn:nbn:se:ltu:diva-27602Scopus ID: 2-s2.0-84874703785Lokal ID: 117d6980-8f89-4153-828c-2d9dd1fd4d0cISBN: 9789814343893 (tryckt)OAI: oai:DiVA.org:ltu-27602DiVA, id: diva2:1000789
Konferanse
International Conference on Physics, Chemistry and Applications of Nanostructures : 24/05/2011 - 27/05/2011
Merknad

Godkänd; 2011; 20130318 (andbra)

Tilgjengelig fra: 2016-09-30 Laget: 2016-09-30 Sist oppdatert: 2021-03-09bibliografisk kontrollert

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