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A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 ◦C
Luleå tekniska universitet, Institutionen för system- och rymdteknik, EISLAB.ORCID-id: 0000-0002-6055-3198
Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland.
2019 (engelsk)Inngår i: Electronics, E-ISSN 2079-9292, Vol. 8, nr 11, artikkel-id 1275Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this study, a temperature equivalent voltage signal was obtained by subtracting output voltages received from two individual temperature sensors. These sensors work in the subthreshold region and generate the output voltage signals that are proportional and complementary to the temperature. Over the temperature range of −40 ∘" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">∘C to +85 ∘" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">∘C without using any calibration method, absolute temperature inaccuracy less than ±0.6 ∘" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">∘C was attained from the measurement of five prototypes of the proposed temperature sensor. The implementation was done in a standard 0.18 μ" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">μ m CMOS technology with a total area of 0.0018 mm 2" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">2. The total power consumption is 40 nW for a supply voltage of 1.2 V measured at room temperature.

sted, utgiver, år, opplag, sider
MDPI, 2019. Vol. 8, nr 11, artikkel-id 1275
Emneord [en]
PTAT, CTAT, temperature sensor, CMOS, ultra low power, calibration free
HSV kategori
Forskningsprogram
Elektroniksystem
Identifikatorer
URN: urn:nbn:se:ltu:diva-76593DOI: 10.3390/electronics8111275ISI: 000502269500071Scopus ID: 2-s2.0-85074401504OAI: oai:DiVA.org:ltu-76593DiVA, id: diva2:1367439
Merknad

Validerad;2019;Nivå 2;2019-11-04 (svasva)

Tilgjengelig fra: 2019-11-04 Laget: 2019-11-04 Sist oppdatert: 2025-10-22bibliografisk kontrollert

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