Driftstörningar
Det förekommer återkommande driftstörningar på några av sök-portalerna på grund av hög belastning. Vi arbetar på att lösa problemet, ni kan tillfälligt mötas av ett felmeddelande.
Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
2D materials-memristive devices nexus: From status quo to Impending applications
Department of Electronic Engineering, Faculty of Applied Energy System, Jeju National University, Jeju City 63243, South Korea.
Department of Aerospace Engineering, Khalifa University of Science & Technology, Abu Dhabi 127788, United Arab Emirates; Cambridge Graphene Centre, Engineering Department, University of Cambridge, UK; Research & Innovation Center for Graphene and 2D Materials, Khalifa University, Abu Dhabi 127788, UAE.
Department of Electronic Engineering, Maynooth University, Ireland.
Department of Electronic Engineering, Faculty of Applied Energy System, Jeju National University, Jeju City 63243, South Korea.
Visa övriga samt affilieringar
2025 (Engelska)Ingår i: Progress in Materials Science, ISSN 0079-6425, E-ISSN 1873-2208, Vol. 152, artikel-id 101471Artikel, forskningsöversikt (Refereegranskat) Published
Abstract [en]

The incorporation of 2D materials into memristive devices has boosted advancements in non-volatile memory (NVM), and other related applications including brain inspired neuromorphic systems, artificial intelligence (AI)-machine learning (ML), optoelectronics, photonics, implementing arithmetic operations, and hybrid CMOS architectures. These advancements have taken place among limitations on silicon-based flash and surging data demands, stimulating the research of innovative materials and architectures, particularly for the next generation memory devices. This comprehensive review expands upon the cutting-edge developments in 2D material-based memristors, including their fabrication techniques, performance evaluation, fundamental properties, diverse applications, further challenges in their modernization, and future road map. By emphasizing the distinct characteristics of 2D materials, we reviewed their memristive behavior and highlighted the major contributions by leading researchers over the years. Focus of this review is on the incorporation of graphene (derivatives of graphene), transition metal dichalcogenides (TMDs), and other 2D materials (like MXenes and nanocomposites) in various memristive architectures. The review paper systematically explored the specific roles of graphene and other 2D materials in memristor devices including their use as electrodes, active layers, barrier layers, interfacial layers, and tunnel layers. The major challenges faced by the 2D material based memristor technology hindering their advancement have been critically reviewed including the scalability, yield, hardware implementation, performance enhancement, fabrication techniques, material/device engineering, and commercialization of these devices. Workable solutions to those problems along with the clear and comprehensive road map of future directions for addressing these hurdles have been recommended to unlock the full potential of this transitional technology. This review provides an authoritative resource and compelling rationale for researchers working towards metamorphic memristor solutions by emphasizing the imperative role of 2D materials.

Ort, förlag, år, upplaga, sidor
Elsevier Ltd , 2025. Vol. 152, artikel-id 101471
Nyckelord [en]
Memristors, Graphene and its Derivatives, 2D Nanomaterials and MXenes, Diverse Memristor Applications, Key Challenges, Future Directions
Nationell ämneskategori
Materialkemi
Forskningsämne
Maskinelement
Identifikatorer
URN: urn:nbn:se:ltu:diva-111912DOI: 10.1016/j.pmatsci.2025.101471ISI: 001436797000001Scopus ID: 2-s2.0-85218504923OAI: oai:DiVA.org:ltu-111912DiVA, id: diva2:1944397
Anmärkning

Validerad;2025;Nivå 2;2025-03-13 (u8);

Funder: Ministry of Science; ICT (NRF-2020H1D3A1A04081545);

Full text license: CC BY

Tillgänglig från: 2025-03-13 Skapad: 2025-03-13 Senast uppdaterad: 2025-10-21Bibliografiskt granskad

Open Access i DiVA

fulltext(52033 kB)2248 nedladdningar
Filinformation
Filnamn FULLTEXT01.pdfFilstorlek 52033 kBChecksumma SHA-512
03d2e804e9dfb06349e104bb9a5ccd47797d37e8272630bb7439b17e2d5cb53a9dc9a7d91e59e66ac9481c1145392aed44f7410fd71a44d2699cd2f079c15419
Typ fulltextMimetyp application/pdf

Övriga länkar

Förlagets fulltextScopus

Person

Shaukat, Rayyan AliShi, Yijun

Sök vidare i DiVA

Av författaren/redaktören
Shaukat, Rayyan AliShi, Yijun
Av organisationen
Maskinelement
I samma tidskrift
Progress in Materials Science
Materialkemi

Sök vidare utanför DiVA

GoogleGoogle Scholar
Totalt: 2248 nedladdningar
Antalet nedladdningar är summan av nedladdningar för alla fulltexter. Det kan inkludera t.ex tidigare versioner som nu inte längre är tillgängliga.

doi
urn-nbn

Altmetricpoäng

doi
urn-nbn
Totalt: 606 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf