Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations
Number of Authors: 42016 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, no 18, article id 181509Article in journal (Refereed) Published
Abstract [en]
We employ a combination of pseudopotential and all-electron density functional calculations, to relate the structure of defects in supercells to the isomer shifts and quadrupole splittings observed in Mossbauer spectroscopy experiments. The methodology is comprehensively reviewed and applied to the technologically relevant case of iron-related defects in silicon, and to other group-IV hosts to a lesser degree. Investigated defects include interstitial and substitutional iron, iron-boron pairs, iron-vacancy, and iron-divacancy. We find that, in general, agreement between the calculations and Mossbauer data is within a 10% error bar. Nonetheless, we show that the methodology can be used to make accurate assignments, including to separate peaks of similar defects in slightly different environments.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2016. Vol. 119, no 18, article id 181509
National Category
Other Physics Topics
Research subject
Applied Physics
Identifiers
URN: urn:nbn:se:ltu:diva-27836DOI: 10.1063/1.4948243ISI: 000377717500011Scopus ID: 2-s2.0-84969520087Local ID: 16530f2c-7ecb-4343-ba22-07e761bbd6eaOAI: oai:DiVA.org:ltu-27836DiVA, id: diva2:1001027
Conference
The 28th International Conference on Defects in Semiconductors (ICDS-2015), July 27-31 2015, Espoo, Finland
Note
Validerad; 2016; Nivå 1; 20160707 (andbra); Konferensartikel i tidskrift
2016-09-302016-09-302025-10-03Bibliographically approved