Electronic properties of vacancy-oxygen complexes in SiGe alloys

Markevich, V.P.; Peaker, A.R.; Murin, L.I.; Coutinho, J.; Torres, V.J.B.; Jones, R.; Öberg, Sven; Briddon, P.R.; Auret, F.D.; Abrosimov, N.V.

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Electronic properties of vacancy-oxygen complexes in SiGe alloys

Markevich, V.P.

Centre for Electronic Materials, University of Manchester.

Peaker, A.R.

Centre for Electronic Materials, University of Manchester.

Murin, L.I.

Institute of Solid State and Semiconductor Physics, Minsk.

Coutinho, J.

Department of Physics, University of Aveiro.

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2003 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 340, p. 790-4Article in journal (Refereed) Published

Abstract [en]

Capacitance transient techniques, combined with ab initio modeling, were employed to study the electronic properties and structure of vacancy-oxygen (VO) complexes in unstrained Czochralski-grown Si1-xGex crystals (0

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2003. Vol. 340, p. 790-4

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Computational Mathematics

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Scientific Computing

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URN: urn:nbn:se:ltu:diva-7252DOI: 10.1016/j.physb.2003.09.214ISI: 000188300200165Scopus ID: 2-s2.0-0347946868Local ID: 5987d610-bdbb-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-7252DiVA, id: diva2:980141

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Validerad; 2003; 20070216 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2025-10-21Bibliographically approved

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Markevich, V.P.

Peaker, A.R.

Murin, L.I.

Coutinho, J.

Torres, V.J.B.

Jones, R.

Öberg, Sven

Briddon, P.R.

Auret, F.D.

Abrosimov, N.V.

Abstract [en]

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